Capacitance–Voltage Measurements

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Table of contents

1 Introduction 
2 Diamond Based Electronic Devices 
2.1 Types of Diamond
2.2 Diamond as a Semiconducting Material
2.3 MOS Capacitors
2.4 Schottky Barrier Diodes
2.5 Fabrication of the Devices
3 MOS Capacitors 
3.1 Capacitance–Voltage Measurements
3.1.1 Ideal C–V Curves
3.1.2 Elevated Temperatures
3.1.3 Non-ideal C–V Curves
3.1.4 Measurement Setup
3.1.5 Correction
3.2 I–V Measurements
4 High Voltage Schottky Diodes 
4.1 Geometry
4.2 Differential Equations
5 Results and Discussion 
5.1 Electrical characterization of the MOS Capacitors
5.1.1 Inversion Phenomenon
5.1.2 Oxide Charges
5.1.3 Oxide Thickness
5.1.4 I–V Measurements
5.2 Simulation of Schottky Diodes
6 Conclusions 39A Implementation in Comsol 
A.1 Poisson’s Equation and the Current density equation
A.2 Applied voltages
A.3 Boundary conditions