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Table of contents
General introduction
1 Gate stack technology for 14 nm FDSOI MOSFET devices
1.1 Impact of Metal-Oxide-Semiconductor gate stack properties on MOSFET device performance
1.1.1 MOSFET operation
1.1.2 Metal-Oxide-Semiconductor gate stack properties
1.1.3 MOSFET performance parameters influenced by the gate stack
1.2 Gate stack fabrication process
1.2.1 Oxidation methods and Gate dielectrics
1.2.2 Metal gate electrode and deposition techniques
1.2.2.1 Thin metal gate films deposition techniques
1.2.2.2 Deposition of ultra-thin Titanium nitride films and Aluminum and Lanthanum monolayers by RF-PVD magnetron sputtering
1.3 Metal gate integration in 14 nm Fully-Depleted SOI devices
1.3.1 FDSOI architecture
1.3.1.1 Multi-VTH offer
1.3.1.2 Effective work function requirements for Fully-Depleted SOI devices
1.3.2 Sacrificial metal gate-first process integration
1.3.3 Random local VTH fluctuations
1.4 Conclusion
2 Process flow and test methodology for electrical and physicochemical characterization of gate stack
2.1 Techniques of electrical characterization
2.1.1 Test structures
2.1.1.1 Hybrid devices
2.1.1.2 Short channel test structures
2.1.1.3 Matching test structures
2.1.2 Process flow simplification for nominal devices and specific research wafers
2.1.2.1 Nominal devices
2.1.2.2 Devices with beveled oxide
2.1.3 Measurements and electrical parameters extraction
2.1.3.1 Experimental set up for C-V measurements
2.1.3.2 Extraction of electrical parameters from C-V characteristics
2.2 Physicochemical characterization
2.2.1 Four-point probe resistance measurement
2.2.2 X-Ray Fluorescence
2.2.2.1 Advantages and limitations
2.2.2.2 Methodology for the characterization of the diffusion of gate additives
2.2.3 Secondary Ion Mass Spectrometry
2.2.4 X-Ray Diffraction
2.3 Conclusion
3 Effective work function modulation by accurate control of diffusion of sacrificial lanthanum and aluminum into gate stack of high-! based NFET devices
3.1 State of the art of lanthanum in gate stack
3.1.1 Lanthanum oxide as alternate gate dielectrics
3.1.2 Lanthanum incorporation into Hf-based dielectrics
3.1.3 Lanthanum incorporation into TiN
3.2 Effective work function modulation by accurate control of sacrificial lanthanum diffusion
3.2.1 Device fabrication and electrical characterization
3.2.2 Diffusion characterization by X-Ray Fluorescence
3.2.3 Influence of high-! dielectrics on the effective work function shift induced by lanthanum incorporation
3.3 State of the art of aluminum in gate stack
3.3.1 Aluminum oxide as alternative gate dielectrics
3.3.2 Aluminum incorporation into Hf-based gate dielectrics
3.3.3 Aluminum addition into TiN
3.4 Effective work function modulation by accurate control of sacrificial aluminum diffusion
3.4.1 Device fabrication and electrical characterization
3.4.2 Diffusion characterization by X-Ray Spectroscopy
3.4.3 Influence of high-! dielectrics on the effective work function shift induced by aluminum incorporation
3.5 Sacrificial vs standard final approach
3.6 Conclusion
4 Role of TiNon effective work function andmatching of 14 nm FDSOI devices
4.1 State of the art of the modification of the effective work function induced by the TiN
4.1.1 Modulation of the effective work function by tuning TiN thickness
4.1.2 Modulation of the effective work function by tuning N composition in TiN gate
4.1.3 Effect of the oxygen incorporation in TiN gate on the effective work function
4.1.4 Effect of the reduction of oxygen vacancy defects on effective work function
4.2 Characterization of the impact of TiN on the effective work function of 14 nm FDSOI devices
4.2.1 Impact of nitrogen content into TiN on the effective work function
4.2.2 Influence of high-! dielectrics on the work function shift induced by TiN thickness
4.2.3 Titanium and nitrogen diffusion into HfSiON/SiON and HfON/SiON stacks
4.2.4 Influence of Arsenic doping into Poly-Si layer on the effective work function
4.3 Impact of deposition process on TiN microstructure and local VTH variability
4.3.1 Impact of pressure conditions on microstructure of TiN deposited by RF-PVD
4.3.2 Impact of RF power conditions on microstructure of TiN deposited by RF-PVD
4.3.3 Electrical impact and local VTH variability improvement with TiN microstructure engineering
4.3.4 TiN microstructure versus thickness
4.4 Conclusion
Conclusions and Perspectives
Bibliography
