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Table of contents
Chapter 1 Introduction to low-dimensional structures
1.1 Scaling overview
1.2 1-D and 2-D structures
1.3 Top-down vs. Bottom-up approaches
1.4 Electrical issues in low-dimensional structures
1.5 Outline of the thesis
Chapter 2 Electrical properties for FET structures
2.1 Introduction
2.2 Threshold voltage
2.2.1 Linear extrapolation method
2.2.2 Second derivative method
2.2.3 Y-function method
2.3 Carrier Mobility
2.3.1 Conductivity (or drift) carrier mobility
2.3.2 Hall carrier mobility
2.3.3 MOSFET carrier mobility
2.4 Series and contact resistances
2.5 Subthreshold swing
2.6 Capacitance
2.7 Summary
Chapter 3 Low-frequency noise characterization
3.1 Background: Definition and concepts
3.2 Fundamental noise sources
3.2.1 Thermal noise
3.2.2 Shot noise
3.2.3 Generation-Recombination (g-r) noise
3.2.4 Random-Telegraph-Signal noise
3.2.5 1/f noise
3.3 1/f noise models for FET structures
3.3.1 Hooge mobility fluctuation model
3.3.2 Carrier number fluctuation model
3.3.3 Carrier number fluctuation with correlated mobility fluctuation model
3.4 Noise measurement system configuration
3.5 Summary
Chapter 4 Multi-Gate MOSFET
4.1 Background: From planar to 3-D structure
4.2 FinFETs
4.2.1 Device structure
4.2.2 Electrical characterization at the fin width variation
4.2.3 Electrical characterization of the length dependence
4.2.4 Device simulation for the fin width dependence
4.3 Junctionless FETs
4.3.1 Device structure
4.3.2 DC characteristics
4.3.3 LF noise characteristics
4.4 Summary: Surface vs. Bulk conduction
Chapter 5 Nanowire and Nanotube
5.1 Background: Toward 1-D structures
5.2 3-D stacked Si and SiGe nanowires
5.2.1 Mobility enhancement – strain effect
5.2.2 Device structure
5.2.3 C-strained and un-strained SiGe nanowire p-type FETs
5.2.4 Noise comparison between Si and SiGe nanowire n-type FETs
5.3 Nanotubes and nanowires based on Bottom-up approach
5.3.1 Metal-semiconductor junctions in multi-walled carbon nanotubes
5.3.2 Quality index for metal contacts – GaN nanowire
5.4 Summary: Impact of channel strain and metal contact
Chapter 6 Graphene
6.1 Physical Backgrounds
6.1.1 Electronic structure and carrier transport
6.1.2 Research trends of graphene
6.2 Device structure of graphene field effect transistors
6.3 Electrical properties and low-frequency noise in G-FETs
6.3.1 Typical I-V characteristics & Length dependence
6.3.2 Mobility scatterings on the SiO2 substrate
6.3.3 LF noise characteristics
6.4 Summary
Chapter 7 Conclusions & Perspectives
References
