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Table of contents
Chapter 1:Introduction
1.1 General Introduction
1.2 Silicon-on-Insulator (SOI) Technology
1.2.1 Scaling Limit of Bulk Silicon MOSFETs
1.2.2 State-of-the-art of SOI Technology
1.2.3 SOI Wafer Fabrication: Smart-CutTM Process
1.2.4 Summary
1.3 Ultimate Scalability and Flexibility of SOI Devices
1.3.1 Planar Partially Depleted and Fully-Depleted SOI Devices
1.3.2 Multi-Gate FDSOI Devices
1.3.3 Ultrathin Body and BOX (UTBB) MOSFETs
1.3.3.1 Inter-Gate Coupling Effect: Typical Coupling Mechanism
1.3.3.2 Super-Coupling Effect
1.3.3.3 Short Channel Effects in FDSOI
1.3.4 Compound Semiconductor on Insulator Devices
1.4 Conclusion
1.5 References
Chapter 2: Floating Body Effects in Ultrathin FDSOI MOSFETs
2.1 Introduction
2.2 Kink Effect in Ultrathin Fully-Depleted SOI MOSFETs
2.2.1 Experimental Details
2.2.2 DC Measurement
2.2.3 Pulsed-Mode Measurement
2.2.4 TCAD Device Simulation
2.2.5 Summary
2.3 Gate-Induced FBE (GIFBE) in Ultrathin MOSFETs
2.3.1 Experimental Details
2.3.2 Current and Transconductance Characteristics
2.3.3 Summary
2.4 Parasitic Bipolar Transistor (PBT) Effect
2.4.1 Experimental Details
2.4.2 Transfer Characteristics
2.4.3 Summary
2.5 Sharp-Switching and Hysteresis Characteristics
2.5.1 Steady-State Characteristics
2.6 Transient and History Effect: Meta-Stable-Dip (MSD) Effect
2.6.1 Generic MSD Feature and New Memory Effect
2.6.2 Transient Current Evaluation
2.7 Conclusion
2.8 References
Chapter 3: Dynamic Body Potential Variation in Ultrathin FDSOI MOSFETs
3.1 Introduction
3.2 Body Potential Measurement in Non-Equilibrium
3.2.1 Experimental Details
3.2.2 DC Characteristics of Body Contacted n-MOSFET
3.2.3 Correlation with FBEs
3.3 Gate Coupling Characterization in Ultra-thin Film Revisited by Body Potential Measurements
3.3.1 Introduction
3.3.2 Measurement Setup
3.3.3 Experiments
3.3.4 TCAD Device Simulation
3.3.5 New Approach for Extracting VT in Ultrathin FDSOI MOSFET
3.4 Conclusion
3.5 References
Chapter 4: Investigation of Advanced SOI applications
4.1 Introduction
4.2 Back-Gated InGaAs-on-Insulator Lateral N+NN+ MOSFET
4.2.1 Introduction
4.2.2 Device Fabrication
4.2.3 Measurement Setup: Pseudo Ψ-MOSFET
4.2.4 Current and Transconductance Characteristics
4.2.5 Mobility Evaluation
4.2.6 Summary
4.3 Transducers using Z2-FET
4.3.1 Introduction
4.3.2 Z2-FET Device Operation
4.3.3 Magnetic Sensor
4.3.3.1 Measurement Setup
4.3.3.2 DC Characteristic under Magnetic Field
4.3.3.3 Summary
4.3.4 Optical Sensor
4.3.4.1 Measurement Setup
4.3.4.2 DC Characteristic
4.4 Conclusion
4.5 References
5. General Conclusion
6. Contributions and Publications
7. Résumé de la Thès
