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Table of contents
CHAPTER 1 INTRODUCTION
1.1 Motivation
1.2 Research problems
1.3 State-of-the-art
1.4 Scope of the thesis
CHAPTER 2 FUNDAMENTALS OF MATERIALS AND EXPERIMENTS
2.1 Fundamental properties of III nitrides
2.1.1 Structural properties of III nitrides
2.1.2 Optical properties of III nitrides
2.2 Experimental methods
2.2.1 Metal-organic vapor-phase epitaxy
2.2.2 Characterization techniques
CHAPTER 3 MOVPE STUDIES OF BAlGaN MATERIALS
3.1 MOVPE growth of AlGaN single layers
3.1.1 Control of composition and relaxation
3.1.2 Critical thickness for AlGaN grown on AlN templates
3.1.3 Estimation of threading dislocation densities by XRD
3.2 MOVPE growth of BAlN with high boron content
3.2.1 BAlN/AlN grown at 1000 C
3.2.2 BAlN grown at low temperature with annealing
CHAPTER 4 DEEP UV AlGaN MQWS: DESIGN, GROWTH AND CHARACTERIZATIONS
4.1 AlGaN MQW design for enhanced TE (E?c) emission
4.1.1 Principles of AlGaN band structure calculation
4.1.2 Design of AlGaN MQWs
4.2 Growth and characterizations of MQWs
4.2.1 Structural characterizations
4.2.2 Optical characterizations
4.3 10- and 20-period MQWs
4.4 Defects in MQWs and their influence on DUV emission
4.4.1 Structural investigations of defects
4.4.2 Optical influence of defects in AlGaN MQWs
CHAPTER 5 DISTRIBUTED BRAGG REFLECTOR: SIMULATIONS AND REALIZATION
5.1 Transfer-matrix simulations of DBRs
5.2 Design of BAlN/AlGaN DBRs
5.3 Simulation of structural quality factors
5.3.1 Roughness
5.3.2 Influence of lattice strain
5.4 Realization of BAlN/Al(Ga)N DBRs for DUV
5.4.1 Growth conditions for DBRs
5.4.2 BAlN/Al(Ga)N DBRs with reflection at DUV wavelengths
5.4.3 Characterizations of DBRs and reflectance comparison with simulations
CHAPTER 6 CONCLUSION AND PERSPECTIVE
6.1 Conclusion
6.2 Perspective
6.3 Publications and awards
References
