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Table of contents
Acknowledgements
Introduction
I Bibliography
Introduction
I.1 Retrospective
I.2 MJSCs on Ge and GaAs wafers
InGaAsN on Ge
I.3 MJSC on Si wafers
GaAs on Si
GaP on Si
InGaPAsN on Si
Band structure and properties of dilute nitrides
Alternative way for growth of GaP on Si
Summary
II Experiments and methods
Introduction
II.1 Growth technology
Molecular-beam epitaxy
Plasma-enhanced atomic-layer deposition (PE-ALD)
II.2 Post-growth processing
Contact fabrication
Etching methods
II.2.2.1 Dry etching
II.2.2.2 Wet etching
Post-growth processing of SC
II.3 Experimental methods
Current –voltage characteristics
Quantum efficiency and optical measurements
Capacitance-voltage method
Admittance spectroscopy
Deep-level transient spectroscopy
Structural methods
II.4 Simulation
Summary
III InGaAsN
Introduction
III.1 Samples preparation
III.2 Photoelectric properties
III.3 Capacitance measurements
Quasi steady-state capacitance measurements
DLTS measurements
III.4 Structural properties
III.5 Simulation of external quantum efficiency
Summary
IV InGaPAsN
Introduction
IV.1 Single-junction grown on GaP wafers
Samples description
Quantum efficiency and current-voltage measurements of single-junction solar c
Admittance spectroscopy
Capacitance- voltage measurements
Deep-level transient spectroscopy
IV.1.5.1 GaPAsN layer of sample #2
IV.1.5.2 GaPAsN layer of sample #3
IV.1.5.3 InP/GaPN layer of sample #4
IV.2 Double-junction solar cells on Si wafers
Samples description
Quantum efficiency and I-V curves
Capacitance measurements of double-junction solar cells
IV.3 Influence of post-growth thermal annealing on solar cells
Summary
V PE-ALD growth
Introduction
V.1 Growth of structures
V.2 Structural properties
V.3 Electrical properties
Current-voltage characteristics of n-GaP/p-Si structures grown by PE-ALD
Capacitance characterization of GaP/n-Si structures grown by PE-ALD
V.4 Influence of PE-ALD of GaP on the silicon wafers quality
Summary
Conclusion and perspectives
References
Appendix A. Contact formation for single-junction SC on GaP
A.1 Indium contacts
A.2 Mesa-structures
Appendix B. Analysis of the spectral response in InGaPAsN based solar cell
Appendix C. Contact formation for multi-junction SC on Si
C.1 Indium contacts
C.2 Mesa-structures
Appendix D. List of abbreviations and symbols
Appendix E. List of publications and conferences
Résumé de thèse
