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Table of contents
Table of contents
Abstract
Résumé
Table of contents
1. Introduction
1.1. Status of world’s photovoltaics
1.2. Solar cell technologies
1.3. State of the art in surface passivation
1.3.1. High-temperature approach
1.3.2. Low-temperature approach
1.3.2.1. Hydrogenated amorphous silicon nitride
1.3.2.2. Hydrogenated amorphous silicon oxide
1.3.2.3. Hydrogenated amorphous silicon carbide
1.3.2.4. Aluminium oxide
1.3.2.5. Hydrogenated amorphous silicon
1.4. a-Si:H/c-Si heterojunction solar cells
1.5. Structure and fabrication process of heterojunction solar cells at INES.
1.6. Specific research objectives: back side of heterojunction solar cells
1.7. Aim of this work
2. Main aspects of the back side of amorphous/crystalline silicon heterojunction solar cells physics
2.1. n/n+ junction: recombination and passivation
2.1.1. Basics of carrier recombination mechanisms in crystalline silicon
2.1.1.1. Bulk recombination
2.1.1.2. Surface recombination
2.1.2. Effective lifetime and surface recombination velocity
2.1.3. Surface passivation techniques
2.1.3.1. Field effect passivation
2.1.3.2. Chemical passivation: saturation of defects
2.2. n/n+ band energy diagram analysis
2.3. The solar cell and the impact of the BS on device characteristics
2.3.1. Current density and open-circuit voltage
2.3.2. Fill factor and efficiency
2.3.3. Equivalent circuit of heterojunction solar cells
2.4. Band diagram analysis and carrier transport at the rear side of HJ solar cells
2.5. Back side optical considerations
3. Amorphous silicon layers applied to back side of HJ devices
3.1. Properties of hydrogenated amorphous silicon
3.2. Experimental details for PECVD a-Si:H
3.2.1. PECVD set-up
3.2.2. Sample preparation and standard characterisation techniques
3.3. Advanced electrical characterisation
3.4. Influence of deposition parameters
3.4.1. Process pressure
3.4.2. Inter-electrode distance
3.4.3. PH3 concentration
3.4.4. Hydrogen dilution ratio
3.4.5. Influence of c-Si wafer orientation
3.5. Integration of (n)a-Si:H single layers at the BSF of HJ devices
3.6. Integration of (n)a-Si:H double-layer stacks at the BSF of HJ devices
3.6.1. Buffer layer doping influence
3.6.1.1. Solar cells results
3.6.1.2. Solar cells modelling
3.6.2. Buffer layer thickness influence
3.6.3. N+ doping influence
3.6.4. Buffer layer and N+ layer hydrogen dilution
3.6.5. N+ layer thickness
4. Back contact of heterojunction solar cells
4.1. Transparent conductive oxides in HJ solar cells: Why ZnO:B?
4.2. Fabrication of ZnO:B layers by low pressure CVD
4.2.1. Relevant properties of ZnO films
4.2.2. Low-pressure chemical vapour deposition system
4.2.3. Influence of deposition parameters
4.2.3.1. Diborane to DEZ gas flow ratio
4.2.3.2. Water vapour to DEZ gas flow ratio
4.2.3.3. Increasing thickness
4.2.3.4. Heater temperature variation
4.3. Post-H-plasma treatment
4.4. Stability analysis under atmosphere exposure
4.5. Laser annealed ZnO: a novel approach for high-efficiency cost-effective HJ solar cells
5. Solar cell and module integration
5.1. Back-contact comparison
5.2. Diverse technological issues
5.3. Record efficiency solar cells
5.4. Industrial module integration
Conclusions and outlook
A. (n)a-Si:H layers modelling
List of Figures
List of Tables
List of symbols and abbreviations
References
