(Downloads - 0)
For more info about our services contact : help@bestpfe.com
Table of contents
1. Introduction
11B1.1 Overview of Semiconductor Industry
12B1.2 CMOS Scaling Issues and Short Channel Effect
13B1.3 Advanced MOSFET technology
14B1.4 Conclusion and Dissertation Outline
2B2. Electrical characterization of MOSFET
15B2.1 Introduction
16B2.2 Basic Operation Principle of MOS-FET
17B2.3 Y Function Method
18B2.4 Split C-V Method
19B2.5 Low Frequency Noise Analysis
20B2.6 Conclusion
3. Numerical percolation simulation with SPICE simulator
21B3.1 Introduction
22B3.2 Percolation Theory
23B3.3 Numerical Percolation Simulation with Floyd’s Algorism
24B3.4 SPICE (simulation program with integrated circuit emphasis) Simulation
25B3.5 Conclusion
4B4. Flat-band voltage and low-field mobility analysis of junctionless transistors under low-temperature
26B4.1 Introduction
27B4.2 Device Fabrication Process and Electrical Measurement Conditions
28B4.3 Experimental Results and Discussion
29B4.4 Temperature Dependence of Electrical Parameters of Tri-Gate Nanowire JLTs
4.5 Conclusion
5B5. Carrier mobility and low frequency noise characteristics of tin-oxide nanowire FET
30B5.1 Introduction
31B5.2 Device Fabrication Process and Electrical Measurement Conditions
32B5.3 Effective Gate-to-Channel Capacitance Simulation
33B5.4 Mobility Analysis
34B5.5 Low Frequency Noise Characteristics of SnO2 NW-FETs
35B5.6 Conclusion
6B6. Charge transport of quasi-2D random network of carbon nanotube TFTs
36B6.1 Introduction
37B6.2 Device Fabrication Process and Electrical Measurement Conditions
38B6.3 Static Parameter Extraction
39B6.4 Low Frequency Noise Characteristics
40B6.5 Numerical 2D Percolation Simulation
41B6.6 Effective Gate Coupling Capacitance Model
42B6.7 Conclusion
7B7. Thermoelectric power of single walled carbon nanotube networks
43B7.1 Introduction
44B7.2 Sample Preparation and Measurement Method
45B7.3 Optical UV-vis-NIR Range Analysis of Precisely Tuned Ratio of Semiconducting and Metallic SWCNTs
46B7.4 Theoretical Modeling with account for the Effect of Junction TEP in Mono-dispersed SWCNT networks
47B7.5 TEP Characteristics of Precisely Tuned Ratio of Semiconducting and Metallic SWCNTs
48B7.6 Conclusion
8. Conclusion
9BAppendix
49BAppendix A. A dual analyzer for real-time impedance and noise spectroscopy of nano-scale devices
10BList of publications
