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Table of contents
Introduction
Chapter 1. Silicon carbide nanowires: growth, properties and applications
1.1 Introduction
1.2 Introduction about bulk SiC
1.2.1 Polytypism in SiC
1.2.2 Properties of bulk SiC
1.2.3 Defects in SiC
1.3 SiC nanowire growth
1.3.1 Introduction: the fabrication methods of nanowires
1.3.2 Bottom-up growth mechanisms of nanowires
1.3.3 Fabrication of SiC nanowires
1.4 Properties of SiC nanowires
1.4.1 Mechanical properties of SiC nanowires
1.4.2 Electrical properties of SiC nanowires
1.4.3 Thermal property of SiC nanowires
1.5 Potential applications of SiC nanowires
1.5.1 Field emission display
1.5.2 SiC nanowires as fillers for composite matrix materials
1.5.3 NEMS applications
1.5.4 Energy conversion devices
1.5.5 Catalytic nanomaterials
1.5.6 Nanowires for self-cleaning coating films
1.5.7 Hydrogen storage
1.5.8 Nanodevices
1.5.9 Bio-related application
1.6 Conclusion
Chapter 2. Modeling of electrical transport in Si and SiC nanowire FET
2.1 Introduction
2.1.1 Self-consistent solution
2.1.2 Non equilibrium Green’s Function formalism
2.1.3 Presentation of the simulation scheme
2.2 Electrical transport of nanowires
2.2.1 Effective mobility
2.2.2 Surface roughness effect
2.3 Simulation of thermoelectric properties of Si and SiC nanowires
2.3.1 Theoretical background of thermoelectric properties
2.3.2 Simulation results of thermoelectric properties of SiC nanowires
2.3.2 Simulation results of thermoelectric properties of Si nanowires
2.4 Conclusion
Chapter 3. Fabrication of SiC nanostructures by top-down method
3.1 Introduction
3.2 Dry etching of SiC
3.2.1 Etching mechanism of inductively coupled plasma
3.2.3 Etching phenomena
3.3 Experimental results for the fabrication of SiC nanopillars
3.3.1 Effect of metal mask species
3.3.2 Effect of SF6/O2 flow rate ratio
3.3.3 Effects of bias voltage and chamber pressure
3.3.4. Etching profile evolution over etching time
3.3.5. Hexagonal shape of SiC nanopillars
3.3.6 Dependence of polytypes and crystal orientations
3.3.7 Fabrication of SiC FinFET like structures
3.3.7 Experiments with the Bosch process
3.4 Conclusion
Chapter 4. SiC nanoFETs
4.1 Introduction: the state-of-the-art of nanoFET
4.1.1 Important issues for the fabrication of nanowire FETs
4.1.2 Issues for high performance of SiC nanowire FETs
4.2 Fabrication process of SiC nanowire FETs
4.2.1 Fabrication steps of SiC NWFET
4.2.2 Fabrication steps of SiC NPFET
4.3 Electrical characterization of SiC nanoFET
4.3.1 Electrical properties of SiC NWFET
4.3.1 Improvement of ohmic contact of SiC nanowire by Ni silicidation
4.3.2 Electrical property of SiC nanopillar FET
4.4 Conclusion
Conclusion and Perspectives
Appendix
