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Table of contents
INTRODUCTION
CHAPTER I – THERMOELECTRICITY AND NANOSTRUCTURATION
1 – PRINCIPLES OF THERMOELECTRICITY
1.1 – HISTORY OF THERMOELECTRICITY
1.2 – THE THERMOELECTRIC EFFECTS
1.2.a – The Seebeck effect
1.2.b – The Peltier effect
1.2.c – The Thomson effect
1.2.d – The Kelvin Relationships
1.3 – PRINCIPLES OF THERMOELECTRIC CONVERTERS
1.4 – MAIN THERMOELECTRIC PARAMETERS
1.4.a – Electrical conductivity (σ)
1.4.b – The thermal conductivity (λ)
1.4.c – Seebeck Coefficient (S)
1.4.d – Ideal carriers concentration
2 – THERMOELECTRIC APPLICATIONS
2.1 – STATE OF THE ART MATERIALS
2.1.a – Low and medium temperature materials
2.1.b – High temperature materials: Silicon-Germanium (SiGe)
2.2 – BULK MATERIALS-BASED DEVICES
2.2.a – Generators
2.2.b – Cooling devices
2.2.c – Thermoelectric sensors
2.3 – THERMOELECTRIC THIN FILMS DEVICES
2.3.a – Thin film thermoelectric generators
2.3.b – Thin film cooling devices
2.3.c – Thin film thermoelectric sensors
3 – INCREASING THE THERMOELECTRIC PROPERTIES VIA NANOSTRUCTURATION
3.1 – POWER FACTOR IMPROVEMENT
3.2 – THERMAL CONDUCTIVITY REDUCTION
4 – QUANTUM WELLS AND QUANTUM DOTS SUPERLATTICES
4.1 – INTRODUCTION TO QUANTUM CONFINED STRUCTURES AND SUPERLATTICES
4.2 – GENERAL APPLICATIONS FOR QUANTUM WELLS AND QUANTUM DOTS
4.3 – THERMOELECTRIC APPLICATIONS FOR QWSL’S AND QDSL’S
5 – CONCLUSION
REFERENCES
CHAPTER II – THE CVD GROWTH OF QUANTUM DOTS SUPERLATTICES
1 – INTRODUCTION
2 – THE CVD GROWTH
2.1 – GENERALITIES
2.2 – NUCLEATION AND GROWTH MECHANISMS
2.3 – THE GROWTH RATE LIMITING FACTOR
2.4 – OUR CVD TOOL
2.5 – SI AND SIGE THIN FILM GROWTH
2.6 – TI AND MO PRECURSORS
2.7 – DELIVERY SYSTEM FOR NON-GASEOUS PRECURSORS
2.7.a – TiCl4 evaporation system
2.7.b – MoCl5 sublimation
3 – THE GROWTH OF TI-BASED SILICIDE/SIGE QDSL
3.1 – INTRODUCTION
3.2 – CVD DEPOSITION OF TI-BASED NANO-ISLANDS
3.2.a – The role of deposition temperature
3.2.b – The role of the substrate Ge content
3.2.c – The role of deposition duration
3.2.d – The role of the precursor partial pressure
3.2.e – Role of substrate crystallinity
3.2.f – Conclusion
3.3 – EMBEDDING THE NANO-ISLANDS AND FORMATION OF QUANTUM DOTS
3.3.a – Low temperature embedding: nanowires growth
3.3.b – High temperature embedding
3.4 – TI/SIGE QDSL GROWTH
4 – THE GROWTH OF MO-BASED SILICIDE/SIGE QDSL
4.1 – INTRODUCTION
4.2 – CVD DEPOSITION OF MO-BASED NANO-ISLANDS
4.2.a – Role of deposition temperature
4.2.b – Role of Ge content
4.3 – MO/SIGE QDSL GROWTH
5 – CONCLUSION
REFERENCES
CHAPTER III – CHARACTERIZATION OF QDSL FOR THERMOELECTRIC APPLICATIONS
1 – INTRODUCTION
2 – STRUCTURAL CHARACTERIZATION
2.1 – INTRODUCTION
2.2 – XRD
2.3 – TEM ANALYSIS
2.3.a – Ti-based QDSL: “n”-doped monocrystalline samples
2.3.b – Ti-based QDSL: “n”-doped polycrystalline samples
2.3.c – Ti-based QDSL: “p”-doped monocrystalline samples
2.3.d – Ti-based QDSL: “p”-doped polycrystalline samples
2.3.e – Mo-based QDSL: “n”-doped monocrystalline samples
2.3.f – Mo-based QDSL: “n”-doped polycrystalline samples
2.3.g – Mo-based QDSL: “p”-doped monocrystalline samples
2.3.h – Mo-based QDSL: “p”-doped polycrystalline samples
2.4 – CONCLUSION
3 – THERMOELECTRICAL CHARACTERIZATION
3.1 – INTRODUCTION
3.2 – TI-BASED QDSL: N-DOPED SAMPLES
3.2.a – Monocrystalline QDSL
3.2.b – Polycrystalline QDSL
3.3 – TI-BASED QDSL: P-DOPED SAMPLES
3.3.a – Monocrystalline QDSL
3.3.b – Polycrystalline QDSL
3.4 – DISCUSSION ABOUT THE THERMOELECTRICAL CHARACTERIZATION RESULTS OF THE TI-BASED QDSL
3.5 – MO-BASED QDSL: N-DOPED SAMPLES
3.5.a – Monocrystalline QDSL
3.5.b – Polycrystalline QDSL
3.6 – MO-BASED QDSL: P-DOPED SAMPLES
3.6.a – Monocrystalline QDSL
3.6.b – Polycrystalline QDSL
3.7 – DISCUSSION ABOUT THE THERMOELECTRICAL CHARACTERIZATION RESULTS OF THE MO-BASED QDSL
4 – CONCLUSION
REFERENCES
CONCLUSION
APPENDIX A
