(Downloads - 0)
For more info about our services contact : help@bestpfe.com
Table of contents
1 Introduction
1.1 High-mobility materials for future CMOS nodes
1.2 Challenges and solutions to integrate InGaAs on Si
1.3 Requirements for self-aligned MOSFETs
1.4 Hybrid CMOS circuits
1.5 Thesis: Organization and relation to published work
2 Substrates: InGaAs Integration on Si
2.1 Introduction
2.2 Direct Wafer Bonding
2.2.1 Layer transfer of III-V heterostructures to Si wafers
2.2.2 Thermal stability of InGaAs-OI layers and regrowth
2.2.3 Recycling of the donor wafer
2.2.4 Large-scale InGaAs-on-insulator substrates
2.2.5 Hybrid InGaAs/SiGe dual-channel substrates
2.3 Confined Epitaxial Lateral Overgrowth
2.3.1 Concept
2.3.2 Fabrication of empty cavities on Si refilled by III-V crystals
2.3.3 Material characterization
2.4 Conclusion and outlook
3 Process Modules: Gate Stack and S/D Regions
3.1 Introduction
3.2 MOS Gate stack
3.2.1 a-Si based gate stack
3.2.2 Remote oxygen scavenging on high-k/InGaAs interfaces
3.2.3 Optimized plasma-based high-k/InGaAs gate stack
3.3 Contacts
3.3.1 Raised Source/Drain
3.3.2 Ni-InGaAs: Self-aligned silicide-like contacts
3.3.3 Direct metal contacts
3.4 Conclusion and Outlook
4 Devices: Self-aligned CMOS-compatible InGaAs MOSFETs
4.1 Introduction
4.2 Gate-first Planar MOSFETs
4.2.1 Impact of Ni-InGaAs contacts on “bulk” devices
4.2.2 Split C-V and Effective mobility
4.2.3 Short-channel devices and roll-off characteristics
4.2.4 Tight-pitch InGaAs MOSFETs
4.3 Non-planar MOSFETs
4.3.1 Junction-less FinFETs
4.3.2 Replacement-gate FinFETs on Silicon
4.3.3 Gate-first FinFETs on selectively grown InGaAs on Silicon
4.4 Conclusion and Outlook
5 Circuits: Hybrid InGaAs/SiGe CMOS
5.1 Introduction
5.2 2D Co-planar CMOS Technology
5.2.1 2D InGaAs/SiGe CMOS based on DWB
5.2.2 2D InGaAs/SiGe CMOS based on CELO
5.3 3D Monolithic CMOS technology
5.3.1 Circuit fabrication
5.3.2 Impact of nFETs fabrication on pFETs performance
5.3.3 InGaAs n-MOSFETs and 3D CMOS inverters
5.4 Conclusion and Outlook
6 Conclusion
A List of Publications
B Contributions to this work
C Acknowledgements
D French Summary
D.1 Introduction
D.2 Substrats : Intégration d’InGaAs sur Si
D.3 Modules : Empilement de grille et régions S/D
D.4 Composants : Transistors auto-alignés compatibles CMOS à base d’InGaAs
D.5 Circuits : Technologie CMOS hybride InGaAs/SiGe
D.6 Conclusion
List of Figures
List of Tables
Bibliography
