LED-PV Reciprocity Relations

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Table of contents

Index of Symbols
Introducing the PhD project
The General Context of Photovoltaic Energy
Chapter I. Theoretical background on CIGS PV devices and their luminescence properties
1.1 Chalcogenide Cu(In,Ga)Se2 thin-film technology
1.1.1 Introduction on CIGS PV technology & Cell configuration
1.1.1.1 Back Contact
1.1.1.2 CIGS Absorber Layer – Deposition Methods
1.1.1.3 CdS Buffer Layers
1.1.1.4 Front Contact
1.1.2 The particular case of micro-CIGS solar cells used in our experiments
1.2 Physics of PV device luminescence
1.2.1 Recombination Mechanisms
1.2.2 Time-Resolved Photoluminescence (TRPL)
1.2.3 Generated carrier dynamics under the influence of electric fields
1.2.4 Spectrally Resolved Photoluminescence
1.2.5 Spectrally-Resolved Electroluminescence & LED-PV Reciprocity Relations
1.2.6 Reciprocity between Photoluminescence and Electroluminescence of solar cells
1.2.7 Information derived from the luminescence intensity, its spectral and spatial variations
1.3 TRPL studies on CIGS solar cells: The literature contradiction dilemma
1.3.1 Theoretical aspect: Physics of charge carrier dynamics in Cu(In,Ga)Se2 PV devices
1.3.2 Photo-excitation-dependent TRPL decay analysis on CIGS
1.3.3 Voltage-bias-dependent TRPL decay analysis
1.3.4 Photo-excitation energy-dependent TRPL decay analysis
Chapter II. Optoelectronic Characterization of PV Devices
2.1 Standard Solar Cells Characterization Techniques
2.1.1 J-V Characteristics
2.1.2 External Quantum Efficiency
2.1.3 Capacitance-based Techniques
2.2 Advanced Luminescence-Based Characterization Techniques
2.2.1 Hyperspectral Imager
2.2.2 Scanning Confocal Microscope (SCM)
2.2.3 Comparison between the HI and the SCM
2.2.4 Time-Resolved Fluorescence Lifetime Imaging (TRFLIM)
2.2.4.1 Overview of technologies and Operating principles of TRFLIM
2.2.4.2 Design and development of a setup dedicated to TRFLIM
2.2.4.3 Spatial and Temporal resolutions of the detection system
2.2.4.4 Characteristics of the excitation system
2.2.4.5 Concluding the construction of the complete TRFLIM setup with a proof of concept
Chapter III. Quantitative local access to optoelectronic properties of Cu(In,Ga)Se2 PV devices using Time- Resolved Luminescence
3.1 General introduction and objectives
3.2 Development of a unified understanding of charge carrier dynamics in Cu(In,Ga)Se2 PV devices
3.2.1 Introduction
3.2.2 Physical model based on carrier recombination centers and shallow defects acting as carrier traps
3.2.3 Photo-excitation intensity-dependent and electrical carrier-injection dependent time-resolved luminescence experiments
3.2.4 Investigating the potential influence of the built-in electric field
3.2.5 Identifying the characteristics of probed carrier recombination
3.2.6 Brief summary and conclusion
3.3 Optical alternative for the study of metastabilities in Cu(In,Ga)Se2 PV devices
3.3.1 Metastabilities-induced distortions of Current-Voltage characteristics
3.3.2 Optical evidence of the effect of metastabilities activation on minority carrier dynamics
3.3.2.1 Introduction & Methodology
3.3.2.2 Basic Characterization
3.3.2.3 Qualitative optical observation of a blue photon recovery effect
3.3.2.4 Hysteresis cycle of the “DCD” parameter
3.3.2.5 Hysteresis cycle of the carrier trapping lifetime
3.3.2.6 Brief Conclusion
3.4 Contactless quantification of trapping defects density in Cu(In,Ga)Se2 PV devices
3.4.1 Development of a physical model for the reconstruction of the time-resolved luminescence decays
3.4.2 Application to the photo-excitation intensity-dependent time-resolved luminescence decays
3.4.3 Application current injection-dependent time-resolved luminescence decays
3.4.4 Discussion on the application to the photo-excitation intensity-dependent and current injectiondependent time-resolved luminescence decays
3.4.5 The effect of the trapping defects density on global photovoltaic performance
3.4.6 An attempt at a quantitative optical spectroscopy of trapping defects
3.4.7 Discussing the choice, the limitations and relevance of the physical model
Chapter IV. Quantitative luminescence-based imaging of optoelectronic properties of thin film PV devices
4.1 Introduction
4.2 Spatially-resolved, spectrally-resolved and time-resolved luminescence of Cu(In,Ga)Se2 PV devices
4.2.1 Quantitative electrical mapping of the variations of PV performance indicators following metastabilities activation
4.2.2 Quantitative optical mapping of trapping defects-induced variations in PV performance indicators
4.2.2.1 Mapping the effect of light-soaking on the quasi-Fermi levels splitting deduced from electroluminescence imaging
4.2.2.2 Micrometric mapping of charge carrier lifetimes and trapping activity
4.2.2.3 Optical micrometric mapping of the absolute trapping defects density
4.2.2.4 Mapping the micrometric losses in quasi-Fermi levels splitting
4.2.2.5 Investigating the effect the photo-excitation energy
4.3 Time-Resolved Fluorescence Lifetime Imaging (TRFLIM) of Solar Cells
4.3.1 GaAs solar cell – An experimental study
4.3.2 GaAs solar cell – A numerical study & material properties extraction
Conclusion
Bibliography