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Table of contents
Chapter I: General introduction
I.1 MOS transistors: state of art and trends
I.2 SOI substrates
I.3 Objectives and organization of the thesis
Chapter II: Pseudo-MOSFET for SOI characterization
II.1 The state-of-art in SOI electrical characterization
II.2 Principle of Ψ-MOSFET and parameter extraction methods
II.3 Impact of measurement
II.3.1 Measurement time setup
II.3.2 Quality of back contact
II.3.3 Role of the probes
II.3.4 Passivated top silicon film
II.4 Extension of Ψ-MOSFET to new materials: III-V-on-insulator
II.4.1 Material characterization before bonding
II.4.2 Ψ-MOSFET with pressure probes on III-V-on-insulator (III-V-OI)
II.4.3 Ψ-MOSFET with metal contacts on III-V-OI
II.4.4 Preliminary results of III-V transistors
II.5 Conclusions and perspectives
Chapter III: Split-CV in Ψ-MOSFET
III.1 Introduction
III.1.1 Split-CV in MOSFET devices
III.1.2 Split-CV in pseudo-MOSFET configuration: state of the art
III.2 Effective surface and improved measurement setup
III.2.1 Dependency of Seff
III.2.2 Improved measurement setup
III.2.3 Robustness of the technique (probe effects)
III.3 Frequency effects
III.3.1 Model derivation
III.3.2 Model validation
III.3.3 Dit signature
III.4 Conclusions and perspectives
Chapter IV: Quasi-static capacitance in Ψ-MOSFET
IV.1 Introduction: quasi-static CV in MOS structures
IV.2 Quasi-static capacitance in pseudo-MOSFET
IV.2.1 Basics of QSCV for Ψ-MOSFET
IV.2.2 Comparison with LCR meter measurements
IV.3 Impact of measurement parameters
IV.3.1 Impact of back contact quality
IV.3.2 Impact of the probes
IV.3.3 Impact of scan direction
IV.4 Dit model
IV.4.1 Model derivation
IV.4.2 Model validation
IV.5 Dit extraction procedure
IV.6 Characterization of non-passivated samples
IV.6.1 Traps charging procedure
IV.6.2 Example of Dit extraction for non-passivated samples
IV.7 Surface potential computation
IV.8 Comparison of Dit profiles for different samples
IV.9 Conclusions and perspectives
Chapter V: Low-frequency noise in Ψ-MOSFET
V.1 Introduction to low-frequency noise
V.1.1 Noise parameters: the Power Spectral Density of a signal
V.1.2 LFN in MOSFETs
V.1.3 State of art of LFN in pseudo-MOSFET
V.2 LFN characterization in Ψ-MOSFET
V.2.1 Measurement setup
V.2.2 Reproducibility issues
V.2.3 Probe pressure impact
V.2.4 Impact of inter-probe distance and die area
V.3 LFN in inhomogeneous material
V.3.1 Physical model
V.3.2 Computation of LF-noise
V.4 Effective surface in LF-noise
V.4.1 Why an effective surface?
V.4.2 Quantification of effective surface
V.5 Probe penetration effects
V.5.1 Experimental evidences
V.5.2 Computation of induced defects by probe penetration
V.6 Conclusions and perspectives
Chapter VI: General conclusions and perspectives
VI.1 Conclusions
VI.2 Perspectives
Appendix I
Van Der Pauw experiments
Hall effect measurement
Table of Acronyms
Table of Constants
Table of Symbols
References
