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Table of contents
1.1. Solar cell principle
1.1.1. Solar spectrum
1.1.2. Theoretic limitation of efficiency
1.1.3. Basics on bulk silicon solar cells
1.2. Light trapping strategies
1.2.1. Ray optics limit
1.2.2. Light trapping in individual nanowire
1.2.3. Light trapping in nanowires array
1.2.4. Light management contribution to Voc
1.3. SiNWs solar cells state of the art
1.3.1. Junction category in geometry
1.3.2. Charge carriers separation and collection in radial junction
1.3.3. Realization of radial junction in nanowire
1.3.4. Passivation on silicon
1.3.5. SiNWs/PEDOT hybrid solar cell
2.1. Introduction to electroless metal-assisted chemical etching
2.1.1. Mechanism of electroless metal-assisted chemical etching (EMACE)
2.1.2. Wafer properties: doping type, doping level, and crystalline orientation
2.1.3. Etching time and temperature
2.1.4. Lithography technique
2.2. Experiment and characterization
2.2.1. Experiment procedures
2.2.2. Characterization methods
2.2.3. Morphology of SiNWs
2.2.4. Concentration of AgNO3
2.3. KOH tapering
2.4. Active area selection
Conclusions
3.1. Introduction to PEDOT
3.1.1. PEDOT structure and its conductivity
3.1.2. Fundamentals of semiconductor electrochemistry
3.1.3. PEDOT electrochemical synthesis
3.1.4. PEDOT electrochemical characterization
3.2. PEDOT electrochemical deposition on SiNWs
3.2.1. Apparatus
3.2.2. PEDOT fabrication
3.2.3. PEDOT redox characterization
Conclusions
4.1. Fabrication
4.2. Analysis on J-V curves
4.1.1. J-V characteristic parameters
4.1.2. Illumination during PEDOT fabrication
4.1.3. Duration of PEDOT deposition
4.1.4. Potential during PEDOT fabrication
4.1.5. Step-wise deposited PEDOT
4.3. Capacitance measurement
4.4. Interface states density
4.5. EQE measurement
Conclusions
