Tandem Solar Cells

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Table of contents

I. GENERAL INTRODUCTION
I.1. CONTEXT
I.2. MOTIVATION AND OBJECTIVES
I.3. APPROACH
II. STATE-OF-THE-ART
II.1. TANDEM SOLAR CELLS
II.2. SILICON HETEROJUNCTION SOLAR CELLS
II.3. PEROVSKITE ON SILICON HETEROJUNCTION TANDEM SOLAR CELLS
II.3.1. Introduction
II.3.2. Review Before 2018
II.3.3. 2018-2020 Timeline
II.4. RECOMBINATION JUNCTIONS
II.4.1. Highly Doped Tunnel Junction
II.4.2. Transparent Conductive Oxide as Recombination Layer
II.4.3. Recombination Junctions in Perovskite/SHJ Tandem
II.5. CHAPTER OUTLOOK
III. MATERIALS AND METHODS
III.1. FABRICATION PROCESSES
III.1.1. Substrate cleaning
III.1.2. Plasma-enhanced CVD
III.1.2.a. Industrial Tool
III.1.2.b. Development Tool
III.1.3. Transparent Conductive Oxide Deposition
III.1.4. Metallisation
III.1.4.a. Electron-beam Evaporation
III.1.4.b. Thermal Evaporation
III.1.4.c. Screen-Printing
III.1.5. Laser Cutting
III.1.6. Perovskite Solar Cell
III.1.7. Example of a Tandem Solar cell Fabrication Process
III.2. LAYER CHARACTERISATION METHODS
III.2.1. Ellipsometry
III.2.1.a. Ellipsometry Measurements
III.2.1.b. Fitting Models
III.2.2. Spectrophotometry
III.2.3. Raman spectroscopy
III.2.4. Four-terminal Sensing
III.2.5. Hall Effect Measurements
III.2.6. Thin-film’s Activation Energy
III.2.7. Contact Resistances Measurements
III.2.8. Scanning and Transmission Electron Microscopy
III.2.8.a. SEM Measurements
III.2.8.b. STEM-EDX Measurements
III.2.9. Confocal Microscopy
III.2.10. X-ray Diffraction
III.3. SOLAR CELLS CHARACTERISATION
III.3.1. Lifetime Measurements
III.3.2. Suns-Voc Measurements
III.3.3. Quantum Efficiency Measurements
III.3.4. Current-Voltage Measurements
III.3.4.a. Solar Cells J-V curves
III.3.4.b. Temperature-Dependent Dark I-V
III.4. OPTICAL SIMULATION
III.4.1. Software Presentation: CROWM
III.4.2. Optical Indexes Extraction Method
III.5. CHAPTER CONCLUSION
IV. MICROCRYSTALLINE SILICON TUNNEL JUNCTION FOR PIN TANDEM SOLAR CELLS
IV.1. INTRODUCTION
IV.2. MICROCRYSTALLINE SILICON LAYERS DEVELOPMENT
IV.2.1. PECVD Parameters
IV.2.2. Growth and Microcrystalline Phase
IV.2.3. Microcrystalline Silicon layers properties
IV.3. INTEGRATION OF MICROCRYSTALLINE SILICON ON SHJ SOLAR CELLS
IV.3.1. Bulk Passivation Improvement
IV.3.2. Rear Emitter SHJ Solar Cells with Front-side N-Type Microcrystalline Silicon
IV.3.3. Standard Emitter SHJ Solar Cells with Back-side Microcrystalline Silicon Tunnel Junction
IV.4. CHAPTER CONCLUSION
V. WAYS TO CHARACTERISE RECOMBINATION JUNCTIONS FOR PEROVSKITE ON SILICON TANDEM SOLAR CELLS
V.1. INTRODUCTION
V.2. TUNNEL RECOMBINATION JUNCTION AS TUNNEL DIODE
V.2.1. Test-Structures for Tunnel Junctions Measurements
V.2.2. Tunnel Diode Behaviour
V.2.3. Conclusion
V.3. TRANSPORT MECHANISMS INSIGHT IN NPN JUNCTIONS
V.4. CHARACTERISATION OF RECOMBINATION JUNCTIONS
V.5. CHAPTER CONCLUSION
VI. TOWARDS PEROVSKITE ON SILICON HETEROJUNCTION TANDEM SOLAR CELLS INTEGRATION
VI.1. INTRODUCTION
VI.2. OPTICAL ANALYSIS OF RECOMBINATION JUNCTIONS IN PK/SHJ TANDEM SOLAR CELLS
VI.2.1. Transparent Conductive Oxides
VI.2.2. Microcrystalline Silicon Tunnel Junction
VI.2.1. Conclusion
VI.3. INVESTIGATION OF THE RECOMBINATION JUNCTIONS INFLUENCE ON THE PEROVSKITE TOP-CELL
VI.4. TANDEM SOLAR CELLS INTEGRATION
VI.5. CHAPTER CONCLUSION
VII. CONCLUSION AND PERSPECTIVES
SCIENTIFIC CONTRIBUTION
REFERENCES
APPENDICES